1.Power Supply: VDD equal 1.2V (1.14V to 1.26V)

2.VDDQ equal 1.2V (1.14V to 1.26V)

3.VPP - 2.5V (2.375V to 2.75V)

4.VDDSPDequal2.25V to 2.75V

5.Functionality and operations comply with the DDR4 SDRAM datasheet

6.16 internal banks

7.Data transfer rates: PC4-2133, PC4-1866, PC4-1600

8.Bi-Directional Differential Data Strobe

9.8 bit pre-fetch

10.Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

11.Supports ECC error correction and detection

12.On-Die Termination (ODT)

13.Temperature sensor with integrated SPD

14.This product is in compliance with the RoHS directive.

15.Per DRAM Addressability is supported

16.Internal Vref DQ level generation is available

17.Write CRC is supported at all speed grades

18.CA parity (Command/Address Parity) mode is supported

CL(IDD)
15 cycles

Row Cycle Time (tRCmin)
47.05ns(min.)

Refresh to Active/Refresh Command Time 1x mode (tRFCmin)
260ns(min.)

Row Active Time (tRASmin)
33.00ns(min.)

Maximum Operating Power
TBD W

UL Rating
94 V - 0

Weight:
0.25 lb

Warranty Information:
Lifetime