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MZ-N5E500BW | ActForNet

MPN: MZ-N5E500BW
Category: Solid State Drives >> Solid State Drive
Vendor: Samsung Electronics America
Weight: 1 LB(S)
Price: US$ 226.41

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3D V-NAND Technology


Samsung???s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today???s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.


TurboWrite Technology


Achieve incredible read/write performance to maximize your everyday computing experience with Samsung???s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.


RAPID Mode


Samsung???s Magician software enables RAPID Mode for up to 2x faster performance by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.


Enhanced Endurance and Reliability


The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class-leading 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.

Product Type
M.2

Interface
SATA 6Gb/s Interface, Compatible with SATA 3Gb/s and SATA 1.5Gb/s Interface

Capacity
500GB (1GB1 Billion byte by IDEMA)

Sequential Read Speed
Up to 540 MB/Sec Sequential Read

Sequential Write Speed
Up to 500 MB/s Sequential Write

Memory Speed
Samsung 32 Layer 3D V-NAND
Samsung 512MB Low Power DDR3 SDRAM

Random Read
(4KB, QD32) Up to 97,000 IOPS Random Read
(4KB, QD1) Up to 10,000 IOPS Random Read

Random Write
(4KB, QD32) Up to 89,000 IOPS Random Read
(4KB, QD1) Up to 40,000 IOPS Random Read

Controller
Samsung MGX Controller

Trim Support
Yes

AES Encryption
AES 256 Bit Encryption (Class 0), TCG/Opal, IEEE 1667 (Encrypted Drive)

S.M.A.R.T
Yes

GC (Garbage Collection)
Auto Garbage Collection Algorithm

WWN Support
World Wide Name Supported

Device Sleep Mode Support
Yes

General
Power Consumption: 50m Watts, Average: 3.5 Watts, Maximum: 4.7 Watts (Burst Mode)
Voltage: 5V +/-5% Allowable Voltage
Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)

Environmental Specifications
Operating Temperature: 32 F to 158 F
Shock: 1500G and 0.5ms (Half Sine)

Form Factor
M.2

Item Dimension (L"xW"xH")
5.63 x 3.84 x 0.83

Weight
0.10 lb

Warranty Information
3 Years